| 摘要 |
A guard ring structure formed around the periphery of a bipolar semiconductor device. A guard region (11) is formed in a substrate (1) of the device so as to extend adjacent a peripheral portion of the device. An insulating layer (3) is formed on the substrate between the peripheral portion of the device and the guard region (11). A polysilicon layer (13) is formed on the insulating layer (3) and covered with a layer of densified dielectic (14). Electrical interconnections are provided between the polysilicon layer (13) and the guard region (11) at spaced apart portions of the device where the guard structure does not need to be protected by the densified dielectric. |
