| 摘要 |
A reduction photolithographic system (10) uses an asymmetric reduction lens (11) forming a non-circular image field at a plane of a substrate (13) to be imaged from a reticle (12). An illuminating system (15) shapes the image field to a configuration for scanning a microcircuit pattern of the reticle onto the substrate in an integer number of substantially equal scans. The image field (20) is configured to provide a single exposure region (20a, 20b, 20c) that is variable in a width transverse to the scan direction and a pair of overlappable double exposure regions (23, 24, 26, 27) at opposite ends of the single exposure region. Integrated illumination intensity along any line parallel with the scan direction in the overlapped double exposure regions equals the integrated illumination intensity along any scan line in the single exposure region.
|
