| 摘要 |
<p>A method for forming a blanket tungsten film by CVD. Before forming nuclei for blanket W film, a mixture gas containing WF6 gas, SiH4 gas, and H2 gas is fed into a vacuum chamber (12). While regulating the flow rate of each gas so that the flow rate of SiH4 gas may be over the flow rate of WF6 gas, a preprocessing is performed for several seconds. Preferably, the ratio of the flow rate of WF6 gas to that of SiH4 gas is regulated to 0.15 to 0.35, and the processing time is 2 to 10 seconds. After this preprocessing, nuclei are formed and then a blanket W film is formed. Thus, the stress in the film is not increased even if the film forming is effected in a low temperature environment.</p> |
