INTERCONNECTION STRUCTURE OF SEMICONDUCTOR ELEMENT AND FORMATION THEREOF

摘要

PROBLEM TO BE SOLVED: To provide the formation of an interconnection structure which reduces void formations in the interconnection structure by depositing a conformal film in an aperture of a large aspect ratio. SOLUTION: On a semiconductor substrate 10, a dielectric layer 28 is deposited to form a conductive interconnection part 38 in a semiconductor element. Then the dielectric layer is patterned to form an interconnection opening 29. A barrier layer 30 of tantalum nitride is formed in the interconnection aperture 29. On the barrier layer, a catalyst layer 31 is formed of palladium and tin colloid. Then, a layer 32 of electroless copper is formed on the catalyst layer. On the electroless copper layer, a layer 34 of electroplating copper is formed, and the electroless copper layer functions as a seed layer for the electroplating copper layer. The part of the electroplating copper layer is removed, and an interconnection part of copper is formed in the interconnection aperture.