| 摘要 |
PROBLEM TO BE SOLVED: To provide a metal plate for heat radiation which has suitable thermal expansion coefficient and high thermal conductivity. SOLUTION: In a metal plate 10 for heat dissipation, copper plates 13, 14 are bonded to both surfaces of a compound metal plate 11 by brazing which is formed by impregnating a porous sintered body of tungsten with fused copper. The compound metal plate 11 is a metal plate which is constituted of two or more kinds of metal and has thermal conductivity higher than or equal to 170 W/m. The ratio of the thickness t2 of the copper plates 13, 14 to the thickness t1 of the compound metal plate 11 is t2/t1=0.1-1.25. Thereby the metal plate 10 for heat dissipation absorbs the heat generated by a semiconductor element 30, and can effectively dissipate the absorbed heat to the outside, so that the semiconductor element 30 can be normally and stably operated for a long term. Between the metal plate 10 and the a package main body 20, generation of thermal stress due to difference of thermal expansion coefficients of them can be prevented. The metal plate 10 for heat dissipation can be rigidly bonded to the package main body 20, and a semiconductor element 30 can be rigidly fixed to a semiconductor element mounting part 31. |
