发明名称 |
Read-only memory and corresponding method of manufacturing by MOS technology |
摘要 |
In a method for the manufacture of cells of a read-only memory, each cell comprises a MOS transistor formed by a first diffusion and a second diffusion of impurities of a first type in a semiconductor substrate with impurities of a second type. These two diffusions are separated by a channel surmounted by a gate. A thick oxide zone is made in the zone designed for the first diffusion, so that the making of the diffusions leads to a first diffusion in two parts separated by this thick oxide zone, a first part adjoining the channel and a second part on the periphery of the transistor. A particular encoding step makes it possible, by means of a mask, to eliminate the thick oxide in certain cells so that these encoded cells have a first continuous diffusion.
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申请公布号 |
US5970348(A) |
申请公布日期 |
1999.10.19 |
申请号 |
US19970962398 |
申请日期 |
1997.10.31 |
申请人 |
SGS-THOMSON MICROELECTRONICS S.A. |
发明人 |
BOIVIN, PHILIPPE;FOURNEL, RICHARD |
分类号 |
H01L21/8246;H01L27/112;(IPC1-7):H01L24/824 |
主分类号 |
H01L21/8246 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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