发明名称 |
Integrated photovoltaic switch with integrated power device |
摘要 |
N+ or P+ diffusions are formed in a lightly doped P type or N type starting wafer. Individual planar and spaced cells or tubs are then formed by etching an array of intersecting trenches between the P+ (or N+) diffusions. The trenches extend through the thin device layer to a predefined depth and are filled with a dielectric and with polysilicon to dielectrically insulate each of the tubs. At least one diffusion of each cell is connected to a diffusion of an adjacent cell to connect each of a predetermined number of the cells. The N+ or (P+) diffusions may be each enclosed by a ring shaped P+ or N+ contact diffusion. An MOS-gated device may be integrated into the same chip and may be a lateral or vertical MOSFET or a lateral or vertical IGBT. |
申请公布号 |
SG68026(A1) |
申请公布日期 |
1999.10.19 |
申请号 |
SG19980000458 |
申请日期 |
1998.02.27 |
申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
CANTARINI, WILLIAM, F.;LIZOTTE, STEVEN, C. |
分类号 |
H01L21/76;H01L21/763;H01L27/142;H01L29/739;H01L29/78;H01L31/042;(IPC1-7):H01L23/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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