| 摘要 |
PROBLEM TO BE SOLVED: To enhance the shape accuracy of a pattern in a pattern forming method applied to lithography using a chemical amplification resist. SOLUTION: A protective resist layer 2 is formed on a substrate 1. A processable resist layer 3 comprising a chemical amplification resist having higher sensitivity than the protective resist layer 2 is formed on the protective resist layer 2. The resist layers 3, 2 are patternwise-exposed by irradiation with light 20 in exposure at least equal to the exposure (Eth2) necessary for the layer 2. The resist layers 3, 2 are then developed to form an objective pattern 4 comprising the developed resist layers 3, 2. |
