发明名称 |
Method of electroplating a copper or copper alloy interconnect |
摘要 |
Copper or a copper alloy is electroplated to fill via/contact holes and/or trenches in a dielectric layer. A barrier layer is initially deposited on the dielectric layer lining the hole/trench. A thin conformal layer of copper or a copper alloy is sputter deposited on the barrier layer outside the hole/trench. Copper or a copper alloy is then electroplated on the conformal copper or copper alloy layer and filling the hole/trench. During electroplating, the barrier layer functions as a seed layer within the hole/trench while the sputter deposited conformal copper or copper alloy layer enhances the flow of electrons from the wafer edge inwardly to provide a favorable deposition rate.
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申请公布号 |
US5968333(A) |
申请公布日期 |
1999.10.19 |
申请号 |
US19980055876 |
申请日期 |
1998.04.07 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
NOGAMI, TAKESHI;DUBIN, VALERY;CHEUNG, ROBIN |
分类号 |
C23C14/02;C23C28/02;C25D7/12;H01L21/288;H01L21/768;H05K3/04;H05K3/10;H05K3/38;H05K3/42;(IPC1-7):C23C28/02;C25D5/02;C25D5/56 |
主分类号 |
C23C14/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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