发明名称 Method for forming thermistor thin film
摘要 A thermistor film is prepared by first preparing an alcohol solution is prepared by dissolving a metal compound in one or more kinds of polyvalent alcohols selected from the group consisting of ethylene glycol, diethylene glycol and glycerin. A coating solution is then prepared by adding and mixing an organic acid having a carboxyl group to the alcohol solution. The coating solution is coated on the surface of a heat-resistant substrate to form a coating film, the substrate on which the coating film is formed is dried and subjected to heat treatment to form a composite oxide precursor containing a metal of the above metal compound, and the precursor is calcined at a temperature of 600 DEG to 1000 DEG C. The method of the present invention can form a thermistor thin film which is dense and uniform over a wide range by simple and easy operations at a low cost.
申请公布号 US5273776(A) 申请公布日期 1993.12.28
申请号 US19920984216 申请日期 1992.11.30
申请人 MITSUBISHI MATERIALS CORPORATION 发明人 YONEZAWA, TADASHI;YAMANAKA, SEIJI;SOE, TAKESHI
分类号 C23C18/12;(IPC1-7):B05D5/12 主分类号 C23C18/12
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