发明名称 PHOTOMASK AND ITS PRODUCTION
摘要 PROBLEM TO BE SOLVED: To decrease the fluctuation in light intensity by defocusing and to obtain fine patterns having good accuracy by forming an isolatedly left pattern on a photomask and providing both sides of the isolatedly left pattern with translucent films across the blanked pattern. SOLUTION: The isolatedly left pattern 1 is formed on the photomask and both sides of the isolatedly left pattern 1 are provided with the translucent films 3 across the left pattern 2 of a width approximately equal to the width line X of the isolatedly left pattern 1. In such a case, the transmittance of the translucent films 3, 3 is preferably 10 to 60% and the translucent films 3 which are not reversed in phases are more preferable. The occurrence of the reduction in the width of the patterns formed on resist even in the case of defocusing is averted and the depth of focus is improved by such constitution. Even more, the production is easy as auxiliary patterns which are difficult to be produced are not used.
申请公布号 JPH11288079(A) 申请公布日期 1999.10.19
申请号 JP19980089884 申请日期 1998.04.02
申请人 NEC CORP 发明人 MATSUURA SEIJI
分类号 G03F1/36;G03F1/70;G03F7/20;H01L21/027 主分类号 G03F1/36
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