Method for fabricating a single-crystal semiconductor

摘要

A method for fabricating a single-crystal semiconductor by means of CZ method is disclosed. The method separates the single-crystal semiconductor from the melt by increasing the lift rate when the growth of a crystal body is finished. By controlling the lift rate, the single-crystal semiconductor is then gradually cooled within a range of an arbitrary crystal temperature, thereby forming a concave separated surface. The single-crystal semiconductor is cooled at a rate of lower than 35 DEG C./min when the temperature of the separated surface is within a range between the melting point and 1000 DEG C., or by keeping the temperature of the separated surface within a range between 1250 DEG C. and 1000 DEG C. for more than 30 minutes. Therefore, no dislocation is introduced in the crystal body, and productivity is improved.