发明名称 |
Combined in-situ high density plasma enhanced chemical vapor deposition (HDPCVD) and chemical mechanical polishing (CMP) process to form an intermetal dielectric layer with a stopper layer embedded therein |
摘要 |
A wafer planarization process which utilizes combined high density plasma chemical vapor deposition (HDP-CVD) process and chemical mechanical polishing (CMP) process is disclosed. This process includes the steps of (a) forming a first HDP-CVD layer on the surface of a semiconductor wafer using a first HDP-CVD composition having a higher etching/depositing component ratio and thus a lower CMP removal rate; (b) forming a second HDP-CVD layer on the first HDP-CVD layer using the same HDP-CVD process but with a second HDP-CVD composition having a highest etching/depositing component ratio and thus the lowest CMP removal rate; (c) forming a third HDP-CVD layer on the second HDP-CVD layer using the same HDP-CVD process but with a third HDP-CVD composition having a low etching/depositing component ratio and thus a high CMP removal rate; and (d) using a chemical mechanical process to remove at least a part of the third HDP-CVD layer using the second HDP-CVD layer as a stopper. All the three HDP-CVD compositions contain the same etching and silicon-containing deposition components so as to improve the CMP efficiency without incurring substantially increased fabrication cost.
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申请公布号 |
US5969409(A) |
申请公布日期 |
1999.10.19 |
申请号 |
US19990249509 |
申请日期 |
1999.02.12 |
申请人 |
WINBOND ELECTRONICS CORP |
发明人 |
LIN, CHI-FA |
分类号 |
H01L21/3105;H01L21/768;H01L23/532;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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