发明名称 |
Lateral thin-film SOI devices with graded top oxide and graded drift region |
摘要 |
A lateral thin-film Silicon-On-Insulator (SOI) device includes a lateral semiconductor device such as a diode or MOSFET provided in a thin semiconductor film on a thin buried oxide. The lateral semiconductor device structure includes at least two semiconductor regions separated by a lateral drift region. A top oxide insulating layer is provided over the thin semiconductor film and a conductive field plate is provided on the top oxide insulating layer. In order to provide enhanced device performance, a portion of the top oxide layer increases in thickness in a substantially continuous manner, while a portion of the lateral drift region beneath the top oxide layer decreases in thickness in a substantially continuous manner, both over a distance which is at least about a factor of five greater than the maximum thickness of the thin semiconductor film.
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申请公布号 |
US5969387(A) |
申请公布日期 |
1999.10.19 |
申请号 |
US19980100832 |
申请日期 |
1998.06.19 |
申请人 |
PHILIPS ELECTRONICS NORTH AMERICA CORPORATION |
发明人 |
LETAVIC, THEODORE;SIMPSON, MARK |
分类号 |
H01L21/336;H01L27/12;H01L29/06;H01L29/08;H01L29/40;H01L29/423;H01L29/78;H01L29/786;H01L29/861;(IPC1-7):H01L27/12 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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