发明名称 |
Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same |
摘要 |
In method for manufacturing a silicon single crystal in accordance with a Czochralski method, during the growth of the silicon single crystal, pulling is performed such that a solid-liquid interface in the crystal, excluding a peripheral 5 mm-width portion, exists within a range of an average vertical position of the solid-liquid interface +/-5 mm. There is also disclosed a method for manufacturing a silicon single crystal in accordance with the Czochralski method, wherein during the growth of a silicon single crystal, a furnace temperature is controlled such that a temperature gradient difference DELTA G (=Ge-Gc) is not greater than 5 DEG C./cm, where Ge is a temperature gradient ( DEG C./cm) at a peripheral portion of the crystal, and Gc is a temperature gradient ( DEG C./cm) at a central portion of the crystal, both in an in-crystal descending temperature zone between 1420 DEG C. and 1350 DEG C. or between a melting point of silicon and 1400 DEG C. in the vicinity of the solid-liquid interface of the crystal. The method maintains high productivity and enables a silicon single crystal and silicon wafers to be manufactured such that a defect density is very low over the entire crystal cross section, and the oxygen concentration distribution over the surface of each silicon wafer is improved.
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申请公布号 |
US5968264(A) |
申请公布日期 |
1999.10.19 |
申请号 |
US19980109530 |
申请日期 |
1998.07.02 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
IIDA, MAKOTO;IINO, EIICHI;KIMURA, MASANORI;MURAOKA, SHOZO;YAMANAKA, HIDEKI |
分类号 |
C30B15/00;C30B15/14;C30B15/22;C30B29/06;H01L21/02;H01L21/208;H01L21/322;(IPC1-7):C30B15/22 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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