发明名称 |
Method for removing silicon nitride material |
摘要 |
A etchant recipe including a mixed gas of one of a CHxFy group and CO gas is used to etch a silicon nitride layer by plasma etching so as to form a thin polymer layer to protect a silicon layer under the silicon nitride layer from over-etching. Then a soft etching is performed to remove the thin polymer. The etchant recipe is, for example, used in forming a contact opening on a gate of a MOS transistor, on which a silicon nitride layer is formed.
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申请公布号 |
US5968846(A) |
申请公布日期 |
1999.10.19 |
申请号 |
US19980152379 |
申请日期 |
1998.09.14 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
CHOU, HSIAO-PANG;CHIAO, JUNG-CHAO;HSIUNG, YU-JU |
分类号 |
H01L21/311;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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