| 摘要 |
Described are apparatus and method for providing relief in a center bottom region of each of a plurality of recessed pockets for supporting a semiconductor substrates during epitaxial deposition. In a preferred embodiment, the relief takes the form of a rectilinear recess, or cutout, formed along the bottom periphery of each pocket to change the single-point, tangential contact to a double-point contact that stabilizes the substrate supported thereon and that reduces slip formation characterizing conventional, unrelieved pockets formed in barrel-type reactors such as susceptors. The invention lends itself to design and manufacture of such reactors as well as retrofit of an existing installed base of conventional reactors.
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