A thin film semiconductor device and method of manufacture.

摘要

A thin film semiconductor circuit layer (1) is formed on a single crystal semiconductor substrate (3) with an oxide film layer (2) between the thin film semiconductor circuit layer 1 and a support substrate (5). The circuit layer and support substrate are stuck together by means of a fluorine containing epoxy family adhesive (4). After this, the single crystal semiconductor substrate (3) is removed. A smoothing layer (6), having silicon dioxide as the main ingredient, may be formed on the thin film semiconductor circuit layer (1). Since neither exfoliation nor destruction of the thin film semiconductor circuit layer happens when removing the single crystal semiconductor substrate, the yield rate in production of thin film semiconductor devices can be greatly improved. <IMAGE>