发明名称 |
Static semiconductor memory device having active mode and sleep mode |
摘要 |
A power supply control circuit of an SRAM cuts off supply of power supply voltage to any component other than memory cells and a word line potential fix circuit in a sleep period in which only retention of data is carried out. The word line potential fix circuit fixes a word line at a non-selection level in the sleep period. The potential on the word line never becomes unstable in the sleep period so that data in the memory cell is never destroyed. Accordingly, a static semiconductor memory device consuming less power and having a high data retention ability can be provided.
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申请公布号 |
US5969995(A) |
申请公布日期 |
1999.10.19 |
申请号 |
US19980129095 |
申请日期 |
1998.08.05 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MORISHIMA, CHIKAYOSHI |
分类号 |
G11C11/41;G11C5/14;G11C11/417;(IPC1-7):G11C16/04 |
主分类号 |
G11C11/41 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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