发明名称 |
Charged-beam exposure mask and charged-beam exposure method |
摘要 |
An electron-beam exposure mask that is able to realize the required pattern transfer accuracy independent of the deflection distortion and aberration of an electron beam. This mask includes a substrate with a first area and a second area, a first plurality of cell apertures formed in the first area of the substrate, and a second plurality of cell apertures formed in the second area of the substrate. The first area of the substrate is designed so that a charged-beam irradiated to the first area has a deflection angle less than a reference angle. The second area of the substrate is designed so that a charged-beam irradiated to the second area has a deflection angle equal to or greater than the reference angle. Each of the first plurality of cell apertures corresponds to fine patterns necessitating high pattern transfer accuracy. Each of the second plurality of cell apertures corresponds to rough patterns unnecessitating the high pattern transfer accuracy.
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申请公布号 |
US5968686(A) |
申请公布日期 |
1999.10.19 |
申请号 |
US19970910424 |
申请日期 |
1997.08.13 |
申请人 |
NEC CORPORATION |
发明人 |
YAMADA, YASUHISA;NOZUE, HIROSHI |
分类号 |
H01L21/027;G03F7/20;H01J37/317;(IPC1-7):G03F9/00 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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