发明名称 DIELECTRIC CAPACITOR, ITS MANUFACTURE AND DIELECTRIC MEMORY USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a dielectric capacitor for simplifying working, and simplifying a manufacturing process even at the time of using stable substances such as platinum as electrode materials. SOLUTION: In this method for manufacturing a dielectric capacitor 10B, a photo-resist film is formed on an inter-layer insulating film 17, isotropic etching is operated by using this photo-resist film as a mask, and groove parts 17a and 17b are formed. A lower electrode layer 18 made of platinum(Pt), dielectric film 19 made of ferroelectric materials, and upper electrode 20 made of platinum(Pt) are successively formed by a sputter method or a CVD(chemical vapor deposition) method. Then, an area part other than the groove parts 17a and 17b in the lower electrode layer 18, dielectric film layer 19, and upper electrode layer 20 is selectively removed by a CMP(chemi-mechanical polishing) method, and the surface is flattened by using the inter-layer insulating film 17 as an end point detection layer.
申请公布号 JPH11289058(A) 申请公布日期 1999.10.19
申请号 JP19990018982 申请日期 1999.01.27
申请人 SONY CORP 发明人 OCHIAI AKIHIKO;TANAKA NAOHIRO;ITO YASUYUKI;HIRONAKA KATSUYUKI
分类号 H01L21/8247;H01L21/822;H01L21/8242;H01L21/8246;H01L27/04;H01L27/10;H01L27/105;H01L27/108;H01L29/788;H01L29/792 主分类号 H01L21/8247
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