Method for etching a compound semiconductor, a semi-conductor laser device and method for producing the same

摘要

An etching method for performing dry-etching on a III-V group compound semiconductor or a II-VI group compound semiconductor in a dry-etching apparatus comprising a plasma source for creating a plasma of density of about 1010 cm-3 or greater, using a mixed gas containing a gas including a halogen element and a gas including nitrogon. The etching conditions are as follows: (a flow rate of the gas containing said halogen gas)/(a flow rate of said nitrogen gas) >/=1; and an internal pressure during etching reaction is about 1 mTorr or greater.