发明名称 |
Method of manufacturing semiconductor device having gate electrodes formed in trench structure before formation of source layers |
摘要 |
A channel layer is formed in a surface of a semiconductor substrate, and a plurality of trenches are formed in the surface of the semiconductor substrate, the trenches being deeper than the channel layer. Then, gate electrodes are formed in the trenches, respectively, after which body layers are formed between the trenches and source layers are formed adjacent to the trenches.
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申请公布号 |
US5970344(A) |
申请公布日期 |
1999.10.19 |
申请号 |
US19980138617 |
申请日期 |
1998.08.24 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
KUBO, HIROTOSHI;KUWAKO, EIICHIROH;KITAGAWA, MASANAO;SAITO, HIROAKI |
分类号 |
H01L21/336;H01L29/08;H01L29/417;H01L29/78;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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