发明名称 |
Integrated circuit memory devices with high and low dopant concentration regions of different diffusivities |
摘要 |
An integrated circuit memory device includes a substrate divided into a cell array region, a core region, and a peripheral circuit region. A plurality of memory cells in the memory cell region each comprise a memory cell transistor having first spaced apart source/drain regions of the substrate with a predetermined conductivity. A sensing circuit in the core region of the substrate includes a sensing transistor having second spaced apart source/drain regions of the substrate. Each of the second source/drain regions includes high and low concentration regions of the predetermined conductivity wherein the high and low concentration regions are doped with a common dopant. A peripheral circuit in the peripheral region of the substrate includes a peripheral transistor having third spaced apart source/drain regions wherein each of the third source/drain regions has high and low concentration regions thereof. The high concentration region of the third source/drain regions has a first dopant and the low concentration region of the third source/drain region has a second dopant. Related methods are also discussed. |
申请公布号 |
US5969395(A) |
申请公布日期 |
1999.10.19 |
申请号 |
US19970854874 |
申请日期 |
1997.05.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, KYU-PIL |
分类号 |
H01L27/108;H01L21/8239;H01L21/8242;H01L27/105;(IPC1-7):H01L29/76 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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