| 摘要 |
<p>PROBLEM TO BE SOLVED: To achieve packaging without dispersion in the collapse of a bump or excessive collapse by making higher the height of a first bump region formed, by piling up a second metal layer that is thicker than a first metal layer than that of a second bump region being formed by a second metal layer. SOLUTION: Wiring plating 10 (a first metal layer) is formed at one portion of an electrode 2 that is formed on a semiconductor chip 1, and bump plating 11 (a second metal layer) is formed thicker than the wiring plating 10. In this state, a part where the wiring plating 10 overlaps with the bump plating 11 is the thickest, then, this part becomes a bump 3a and the next thickest part of bump plating 11 is made a dummy bump 3b. At packaging, in a process where the bump is deformed and collapses, first the bump 3a collapses, and then when the bump 3a collapses to the same height as the dummy bump 3b, although a pressure applied to the semiconductor chip 1 is also dispersed to the dummy bump 3b, the amount of bump collapse per time is reduced greatly.</p> |
