Multi-step plasma treatment process for forming low resistance titanium nitride layer

摘要

A method for forming a titanium nitride layer within an integrated circuit. There is first provided a substrate. There is then formed over the substrate a virgin titanium nitride layer, where the virgin titanium nitride layer is formed through a chemical vapor deposition (CVD) method employing a tetrakis-diallylamido titanium source material without a halogen activator source material. The virgin titanium nitride layer is then annealed in a first plasma comprising nitrogen and hydrogen to form a refined titanium nitride layer. The refined titanium nitride layer is then annealed in a second plasma comprising nitrogen without hydrogen. Through the method there is formed a titanium nitride layer with superior step coverage, low resistivity and low impurities concentration.