| 摘要 |
In a method of forming a silicon substrate, a gettering film is formed on a bottom surface of a silicon substrate. An oxygen ion implantation into a top surface of the silicon substrate is carried out at a substrate temperature in the range of 400 DEG C.-700 DEG C. The gettering film is removed from the silicon substrate. The silicon substrate is subjected to a heat treatment at a temperature of not less than 1300 DEG C. for causing a reaction of oxygen and silicon to form a silicon oxide film in the silicon substrate after the gettering film is removed.
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