发明名称 |
High performance mosfet transistor fabrication technique |
摘要 |
A semiconductor fabrication process in which nitrogen is incorporated into the transistor gate without significantly increasing the resistivity of the source/drain region. The incorporation of nitrogen into the gate structure substantially reduces the migration of impurity dopants from the silicon gate into the transistor channel region resulting in a more stable and reliable transistor. In one embodiment, a tail of the nitrogen impurity distribution incorporated into the gate structure extends into the channel region of the semiconductor substrate. In this embodiment, the nitrogen within the channel region prevents excessive lateral diffusion of source/drain impurities thereby permitting the fabrication of deep sub-micron transistors.
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申请公布号 |
US5970347(A) |
申请公布日期 |
1999.10.19 |
申请号 |
US19970896400 |
申请日期 |
1997.07.18 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
GARDNER, MARK I.;FULFORD, JR., H. JIM |
分类号 |
H01L21/28;H01L21/336;H01L29/49;H01L29/51;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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