发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To stabilize the operation of a voltage limiter circuit by including a MOS capacitor whose threshold voltage is negative in an internal voltage generating circuit generating internal voltages by receiving an operating power source voltage. SOLUTION: In drive circuits 7a, 7b, when wirings of outputs of the circuits intersect a wiring 12a, a feedback circuit is generated via the parasitic capacitance CC3 between wirings and operations of the circuits becomes unstable. In order to prevent this unstableness, the gain of a loop is made to be sufficiently small by inserting capacitors CR1 , CR2 whose capacitances are sufficiently larger than parastic capacitances CC1 to CC3 . Capacitors to be used in here are formed between gates and a substrate surface across a gate insulating film and large capacitances can be obtained with relatively small areas by using a thin gate insulating film as a capacitor insulating film. Since there are wells under the gates, the threshold voltage of the capacitors is negative and capacitances of the capacitors becomes roughly constant as long as a voltage of one direction is applied on them so that sides of gates become positive.
申请公布号 JPH11288591(A) 申请公布日期 1999.10.19
申请号 JP19990029648 申请日期 1999.02.08
申请人 HITACHI LTD;HITACHI ULSI SYSTEMS CO LTD 发明人 HORIGUCHI SHINJI;AOKI MASAKAZU;ITO KIYOO;NAKAGOME YOSHINOBU;IKENAGA SHINICHI;ETO JUN;MIYAKE NORIO;NODA TAKAAKI;TANAKA HITOSHI
分类号 G11C11/413;G11C11/407;H01L21/8242;H01L27/108 主分类号 G11C11/413
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