发明名称 |
METHOD AND DEVICE FOR PROCESSING SUBSTRATE |
摘要 |
PROBLEM TO BE SOLVED: To adequately attain various processes of a substrate in a single chamber by an in-line system. SOLUTION: For processes at high-order process parts 32 to 34 having other process parts 31 to 33 as lower-order parts, the lower-order process parts 31 to 33 are nearly shielded by annular partition walls 7a to 7c having a downward flowing-down gap S, such as a processing material, etc., left with the internal surface of the chamber 1 around a support body 3 and the processes at the higher-order process parts 32 to 34 are performed for attaining the purpose. |
申请公布号 |
JPH11288917(A) |
申请公布日期 |
1999.10.19 |
申请号 |
JP19980091951 |
申请日期 |
1998.04.03 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
MINO YOSHIMITSU;TSUTSUMI HIDETAKA;INAGAKI NORIYUKI |
分类号 |
B08B15/00;H01L21/304;H01L21/677;H01L21/68;(IPC1-7):H01L21/304 |
主分类号 |
B08B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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