发明名称 |
Thin-film switching device having chlorine-containing active region and methods of fabrication therefor |
摘要 |
A thin-film switching device includes an active region including noncrystalline silicon, e.g., hydrogenated amorphous silicon, which includes chlorine distributed in a manner which produces a predetermined photoconductivity and a predetermined field-effect mobility in the active region. Preferably, the active region includes a plurality of hydrogenated amorphous silicon layers, at least one of which includes chlorine. In one embodiment, the plurality of hydrogenated amorphous silicon layers includes a hydrogenated amorphous silicon layer including between 0.1 ppm and 106 ppm chlorine. In another embodiment, the plurality of hydrogenated amorphous silicon layers includes a first hydrogenated amorphous silicon layer having a first chlorine concentration and a second hydrogenated amorphous silicon layer having a second chlorine concentration less than the first chlorine concentration. The first hydrogenated amorphous silicon layer includes 1 ppm to 105 ppm chlorine, and the second hydrogenated amorphous silicon layer includes less than 104 ppm chlorine. Related fabrication methods are also discussed.
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申请公布号 |
US5970325(A) |
申请公布日期 |
1999.10.19 |
申请号 |
US19970858974 |
申请日期 |
1997.05.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JANG, JIN;LEE, KEUN-SOO;CHOI, JONG-HYUN |
分类号 |
H01L21/205;H01L21/336;H01L29/786;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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