| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent irregularities in a grain size and to sharply shorten the heat treatment time by a method, wherein an amorphous semiconductor is heat-treated at a specific temperature or lower in a first heat treatment process and a second heat treatment process, whose temperature is lower than that in the first heat treatment process and whose time is longer than that in the first heat treatment process, is performed. SOLUTION: In a first heat treatment process, an amorphous semiconductor is heat-treated at 1,000 deg.C or lower. In a second heat treatment process, the amorphous semiconductor is heat-treated at a temperature which is lower than that in the first heat treatment process and for a period which is longer than that in the first heat treatment process. A switching element Q is formed in a required place on a transparent insulating substrate 1, and an interlayer insulating layer 5 is formed on the entire surface, including the switching element Q. Then, a heat treatment is executed to an amorphous silicon thin film in a film thickness of about 800Åon the substrate 1, is subjected to heat nuclei in 10<80> pieces/cm<3> .sec or higher are generated, a heat treatment is executed at a temperature corresponding to the speed at which nuclei are generated at a density of 10<60> /cm<3> .sec or lower, a solid growth operation is performed, and a polycrystalline silicon thin film 2 whose grain size is uniform is formed.</p> |
