| 摘要 |
PROBLEM TO BE SOLVED: To obtain a polycrystalline silicon structure which has a prescribed core size or a prescribed core size distribution by a method, wherein a doping- material precipitation part is formed in a silicon structure and the core size of a secondary silicon structure which is generated in the crystallization or the recrystallization of the silicon structure is set by the density of the doping- material precipitation part. SOLUTION: A silicon substrate 1 has a doped single-crystal region 2 on its surface. A primary silicon structure 4 is arranged and installed in the upper part of the single-crystal region 2, and an insulation part 3 is formed in its residual region. A polycrystalline silicon substrate 4 is doped with a doping material. An implantation parameter, at this time, is selected in such a way that the concentration of the doping material for the polycrystalline silicon structure 4 exceeds a solubility limit. In the case of an oxygen doping operation, the concentration of a doping material for the primary silicon structure is set in a range of 10<17> to 10<21> cm<-3> , especially in a range of 10<18> to 10<20> cm<-3> . Successively, a heat treatment step is executed, and a doping-material precipitation part 6 is formed in the polycrystalline silicon structure 4. |
