发明名称 GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT
摘要 PROBLEM TO BE SOLVED: To obtain a light-emitting element, capable of emitting a white light at a low operating voltage and high emission efficiency by a single element. SOLUTION: This element is constituted, having a laminate structure involving a light-emitting layer 4 made of a GaN compound semiconductor containing at least In and Ga, the light-emitting layer 4 has a region of comparatively low In proportion and region of a comparatively high In proportion, and these regions each emit blue and yellow lights, which are mixed to obtain a white light from the entire light-emitting layer 4.
申请公布号 JPH11289108(A) 申请公布日期 1999.10.19
申请号 JP19980091173 申请日期 1998.04.03
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 OKU YASUNARI;KAMEI HIDENORI;TAKEISHI HIDEMI
分类号 H01L33/32 主分类号 H01L33/32
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