发明名称 SINGLE ELECTRONIC ELEMENT AND MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a single electronic element with a small effective area in a structure suitable for constituting an integrated circuit, and a method for manufacturing this. SOLUTION: In this single electronic element 1, an island-shaped electrode 32 arranged in a recessed part 11 formed on the surface (basement face) of a basement 10 is connected through a tunnel junction 22 formed oh the side face of the island-shaped electrode 32 with a lead electrode 33 formed on the basement face. In a method for manufacturing this single electronic element 1, a recessed part is formed on the basement face, a first conductive film is formed on the basement face, a first conductive film 33a on the basement face and the first conductive film 32 in the recessed part 11, are formed so as to be separated from each other, the tunnel junction 22 is formed on the side face of the recessed part 11, a second conductive film is formed on the basement face, and the first conducive film and the second conductive film are patterned.
申请公布号 JPH11289079(A) 申请公布日期 1999.10.19
申请号 JP19980091884 申请日期 1998.04.03
申请人 NEC CORP 发明人 SAI CHIYOUSHIN
分类号 H01L21/8247;H01L27/115;H01L29/06;H01L29/66;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):H01L29/66;H01L21/824 主分类号 H01L21/8247
代理机构 代理人
主权项
地址