| 摘要 |
PURPOSE:To provide a magnetoresistance material where the sensitivity to magnetic field is high and the electric resistance changes keenly to a slight change of magnetic field by using alloy having a specified atomic rate composition. CONSTITUTION:Alloy, whose atomic rate compositions expressed by (FexNi1-x) yCu1-y(where 0.10<x<0.60, 0.15<y<0.60) is expressed, is used. In case that the value of atomic rate x is not more then 0.10 (x<=0.10) or not less than 0.60(x>=0.60), the sensitivity to magnetic field (dMR/dH) becomes below 0.10(%Oe). Moreover, also in case that value of atomic rate y is nor more than 0.15(y<=0.15) or nor less than 0.60 (x>=0.60), it is hard to raise the sensitivity to magnetic field to 0.01(%Oe) or over. To use it for a sensor making use of MR effect, it is required that the sensitivity to magnetic field of the magnetic resistance material should be 0.01(%Oe) or over. Therefore, it is necessary to put the value of atomic rate x such that 0.10<x<0.60, and the value of y such that 0.15<y<0.60. |
