| 摘要 |
PURPOSE:To insulate respective individual electrodes from one another without separately performing the photoetching step, etc., at all by a method wherein, before dividing a wafer, the shortcircuit wirings 8 connecting to the whole individual electrodes are formed as if striding over a dividing line between respective individual electrodes with one another. CONSTITUTION:Before dividing a wafer 6, the shortcircuit wirings 8 connecting to the whole individual electrodes 4 of respective LEDs 3 are formed as if striding over a dividing line L between respective individual electrodes 4 with one another. These shortcircuit wirings 8 can be formed simultaneously with respective individual electrodes 4. For example, after growing a metallic film, the shortcircuit wirings 8 can be formed by etching away the prospective parts of the individual electrodes 4 and the prospective parts of the short-circuit wirings 8. Furthermore, the shortcircuit wirings 8 can be cut off simultaneously with the division of the wafer 6 along the dividing line L thereby enabling the respective individual electrodes 4 to be insulated from one another without separately performing the photoetching step, etc., at all. |
