FORMING METHOD FOR METALIZATION OF SEMICONDUCTOR DEVICE

摘要

A metal wiring of a semiconductor device exhibiting a superior electromigration is formed by preparing a conductive substrate 21 forming an interlayer insulating film 23 provided with a contact hole on the conductive substrate, sequentially forming a metal barrier layer 27 and a wetting layer 29 over the entire exposed surface of the resulting structure obtained after the formation of the interlayer insulating film, and forming an aluminum alloy layer 31 dissolved with germanium, silicon and copper in a solid state over the wetting layer. The layer may comprise two sub-layers, only the upper layer containing germanium. In the case of a single uniform layer, the aluminum alloy layer 31 contains about 0.1 to 2% of the weight of silicon, about 0.1 to 2 % of the weight of copper, and about 0.1 to 2 % of the weight of germanium.