| 摘要 |
A method of manufacturing a semiconductor device comprises the steps of forming a first layer interconnect pattern overlying a substrate, forming consecutively a thin silicon oxide film and a thick silicon fluoride oxide film, selectively etching the silicon fluoride oxide film to expose a part of the silicon oxide film by using a first gas of a low fluorine content, and etching the exposed silicon oxide film by using a second gas of a high fluorine content to form a via-hole reaching the first layer interconnect pattern The silicon oxide film has a thickness from 50 to 200 nm while the silicon fluoride oxide film has a thickness of 1 mu m or higher. The thin silicon oxide film provides a reduced amount of an over-etch while thick silicon fluoride oxide film provides a low capacitance for the interconnect to achieve a higher operation of the LSI. |
