Method for the preparation of silicon or silicon compound thin film

摘要

The invention provides a method for preparing a silicon thin film at a high deposition rate or a silicon compound thin film having a high dielectric strength and high hardness, without causing damage to other structure films or forming flakes during film deposition. The method for preparing a silicon or silicon compound thin film involves evaporating a material by means of a high density plasma gun, and depositing a thin film of silicon or silicon compound on a substrate.