发明名称 TFT ARRAY FOR LIQUID CRYSTAL DISPLAY DEVICE, ITS PRODUCTION, LIQUID CRYSTAL DISPLAY DEVICE USING THAT, AND PRODUCTION OF THAT DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a TFT array having a polysilicon film as an active layer having uniform electric field effect mobility in the direction in a plane at the time of the production of a large-area liquid crystal display device, and to provide a liquid crystal display device using the array. SOLUTION: After a buffer layer 2, a polysilicon layer 4, a gate insulating layer 5 and a gate electrode 6 are successively formed on a glass substrate 1, impurities are injected to form a source region 10 and a drain region 9. In the process of forming the polysilicon layer 4, silicon being the vapor source is vaporized by using a pressure-gradient plasma gun, the vaporized silicon particles are excited in a plasma region and the excited particles are made to irradiate the glass substrate 1 to form the polysilicon layer. Since ionized particles having high energy are used, the obtd. polysilicon thin film has high migration and can be used in a deposited state as it is for transistors for pixel switches.</p>
申请公布号 JPH11282013(A) 申请公布日期 1999.10.15
申请号 JP19980085699 申请日期 1998.03.31
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 OGAWA KAZUFUMI;ADACHI KAZUYASU
分类号 H01L29/786;G02F1/136;G02F1/1368;H01L21/336;(IPC1-7):G02F1/136 主分类号 H01L29/786
代理机构 代理人
主权项
地址