发明名称 |
TFT ARRAY FOR LIQUID CRYSTAL DISPLAY DEVICE, ITS PRODUCTION, LIQUID CRYSTAL DISPLAY DEVICE USING THAT, AND PRODUCTION OF THAT DEVICE |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a TFT array having a polysilicon film as an active layer having uniform electric field effect mobility in the direction in a plane at the time of the production of a large-area liquid crystal display device, and to provide a liquid crystal display device using the array. SOLUTION: After a buffer layer 2, a polysilicon layer 4, a gate insulating layer 5 and a gate electrode 6 are successively formed on a glass substrate 1, impurities are injected to form a source region 10 and a drain region 9. In the process of forming the polysilicon layer 4, silicon being the vapor source is vaporized by using a pressure-gradient plasma gun, the vaporized silicon particles are excited in a plasma region and the excited particles are made to irradiate the glass substrate 1 to form the polysilicon layer. Since ionized particles having high energy are used, the obtd. polysilicon thin film has high migration and can be used in a deposited state as it is for transistors for pixel switches.</p> |
申请公布号 |
JPH11282013(A) |
申请公布日期 |
1999.10.15 |
申请号 |
JP19980085699 |
申请日期 |
1998.03.31 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
OGAWA KAZUFUMI;ADACHI KAZUYASU |
分类号 |
H01L29/786;G02F1/136;G02F1/1368;H01L21/336;(IPC1-7):G02F1/136 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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