HALFTONE TYPE PHASE SHIFT MASK BLANK AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To provide a halftone blank which can easily have transmissivity to exposure wavelength and inspection wavelength controlled and has enough chemical resistance for a washing process and its manufacturing method. SOLUTION: Two kinds of target which are Si and Zr are used and reactive sputtering is simultaneously performed to form a compound thin film of Si and Zr, thus obtaining the halftone blank. The element composition ratio of Si and Zr that the halftone blank will contain after the film formation is controlled by controlling electric power applied to the targets respectively. Or a mixture target is obtained by press molding after Si and Zr are mixed in powdery states and sputtering is carried out to form a compound thin film of Si and Zr, thus obtaining the halftone blank.