READ-OUT CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE,申请号KR19920005307-传众专利搜索

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发明名称	READ-OUT CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE
摘要
申请公布号	KR100225551(B1)	申请公布日期	1999.10.15
申请号	KR19920005307	申请日期	1992.03.31
申请人	SONY CORPORATION	发明人	MIYABAYASHI, MASAYUKI
分类号	G11C8/04;G11C7/00;G11C11/401;G11C11/407;G11C11/409;G11C11/417;(IPC1-7):G11C7/00	主分类号	G11C8/04
代理机构		代理人
主权项
地址

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