| 发明名称 |
METHOD FOR FORMING FIELD OXIDE FILM OF DIFFERENT THICKNESS IN INTEGRATED CIRCUIT AND ITS STRUCTURE |
| 摘要 |
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| 申请公布号 |
JPH11284156(A) |
申请公布日期 |
1999.10.15 |
| 申请号 |
JP19980155413 |
申请日期 |
1998.05.21 |
| 申请人 |
TAIWAN MAOXI ELECTRON CO LTD |
发明人 |
SO KOKUREN |
| 分类号 |
H01L21/76;H01L21/762;H01L21/8247;H01L27/115;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):H01L27/115;H01L21/824 |
主分类号 |
H01L21/76 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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