| 摘要 |
PROBLEM TO BE SOLVED: To provide a crystal defect detection method which is capable of detecting crystal defects, such as striation which occurs in a process where a silicon ingot single crystal is formed and visualizing it. SOLUTION: A conductor 7 is arranged on the one surface of a semiconductor wafer 2 via an insulator 4, a bias voltage is applied between the semiconductor wafer 2 and the conductor 7 for putting an interface layer 2a of the wafer 2 that faces the insulator 7 into an inverted state. The rear surface of the semiconductor wafer 2, whose interface layer 2a is kept in an inversion state, is irradiated with a light 14 whose energy is larger than a band gap to obtain photocurrent data, and crystal defects in the semiconductor wafer 2 can be detected based on the photocurrent data. |
