发明名称 SEMICONDUCTOR LASER AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor laser with multi-layer high-reflective film which has a high reliability and having improved performance such as low threshold and low operation current. SOLUTION: A multi-layer high-reflective film comprises a first low refractive index film 204 formed to contact an end surface comprising such optical film thickness as aboutλ/4 to laser wavelengthλwith a linear expansion coefficient±30% of that of the substrate of a semiconductor laser 201 and a refractive index n1 while n1<1.8, a first high refractive index film 206 comprising such optical film thickness as aboutλ/4 to laser wavelengthλwith a refractive index n2 while n2>1.9 and a negative imaginary part part-ik, of refractive index k<0.05, and a second low refractive index film 205 whose material is different from that of the first low refractive index film, with a refractive index n3, provided n3<1, 7, and n1>n3. On the first low refractive index film, the first high refractive index film and the second low refractive index film are alternately laminated in plural numbers, with the total number of layers the being 9 or less.
申请公布号 JPH11284271(A) 申请公布日期 1999.10.15
申请号 JP19980083100 申请日期 1998.03.30
申请人 TOSHIBA ELECTRONIC ENGINEERING CORP;TOSHIBA CORP 发明人 KURONAGA KOICHI;OKADA MAKOTO
分类号 H01S5/00;H01S5/028;(IPC1-7):H01S3/18 主分类号 H01S5/00
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