| 摘要 |
PROBLEM TO BE SOLVED: To enhance production efficiency of DRAMs without impairing a refresh characteristic by a method wherein, after a surface of a Si substrate forming a semiconductor device is exposed to electric charges particles, concentration of a metal element caused by the electric charge particles is measured on the surface of the Si substrate. SOLUTION: In each manufacture step, metal element contamination on a surface of an exposed Si substrate 11 for a test substrate 11 is inspected by all-reflection fluorescent X-rays analysis, an ICP mass analysis or the like in Fe, Al and Ca, and when a metal element concentration value reaches about 10<12> cm<-2> or more in the case of Fe or Al, and when about 3×10<11> cm<-2> or more in the case of Ca, a production line is stopped, and a cause of the metal element contamination is investigated to be removed. At that time, a management value is set so as not to deteriorate a refresh characteristic, and a strict management of the manufacture line of DRAMs is mitigated, and operability of the manufacture line is enhanced. |
