SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor, provided with a clean resist pattern with a superior pattern shape for exceeding the limit although micronization is limited by the wavelength, in the formation of the resist pattern through exposure. SOLUTION: In this manufacturing method, a first resist pattern 1a containing a material for generating acid by the exposure is covered with second resist 2 containing resin bridged by the presence of the acid provided with an unsaturated bond or hydroxyl group. Then, by forming a bridge layer 4 in the first resist pattern 1a through the exposure and performing development, a second resist pattern 2a of larger thickness than that of the first resist pattern 1a is formed.