发明名称 SEMICONDUCTOR CIRCUIT DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To apply an optimum stress conditional voltage and to obtain an efficient cleaning effect by connecting a booster circuit to a power source terminal and connecting an output from a power source selection switch selecting the output voltage of the booster circuit and a test power source to a flash memory EEPROM circuit. SOLUTION: The power source terminal 1 is connected to the booster circuit 2, which boosts the power source to a fixed voltage required for rewriting the flash memory EEPROM 9 to output it. The power source selection switch 7 is connected to the boosted power source 3 and a test power source terminal 4, and selects either one between them by a power source selection control signal 5 to input it to the flash EEPROM 9 as a rewriting power source. When the terminal 4 is selected by the switch 7, the test power source is inputted to the flash EEPROM 9 main body, and the flash EEPROM 9 main body is evaluated easily. Since the path of the booster circuit 2 isn't used, an optional voltage is set in the terminal 4 in an acceleration test to be inputted.</p>
申请公布号 JPH11283398(A) 申请公布日期 1999.10.15
申请号 JP19980083367 申请日期 1998.03.30
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KAI TOSHIYA
分类号 G01R31/28;G11C16/02;G11C16/06;G11C29/00;G11C29/06;(IPC1-7):G11C29/00 主分类号 G01R31/28
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