发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor body (1) defines at least one active device. In the example shown in Figure 1 complementary n channel and p channel IGFETs (10 and 20) are provided. An electrically conductive region, which may form the gate conductive region (101 and 102) of the insulated gates (11 and 21) of an IGFET, is provided on a first major surface (2) of the semiconductor body (1) and is encapsulated within a covering insulating region (300,400). An area (100a) of the electrically conductive region (101 and 102) contacts a relatively highly doped semiconductor region (50) provided adjacent the one major surface (2) and electrical contact is made to the electrically conductive region (101 and 102) via a conductive track (205) provided on the first major surface (2) and a conductive path provided by the relatively highly doped semiconductor region (50). It is thus not necessary to form a contact opening through the covering insulating region (300,400) to enable contact to the electrically conductive region (101 and 103) and accordingly electrical interconnections can overlap or cross over the encapsulated electrically conductive region (101 and 102). <IMAGE> <IMAGE> |
申请公布号 |
KR100223725(B1) |
申请公布日期 |
1999.10.15 |
申请号 |
KR19910009947 |
申请日期 |
1991.06.17 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
WILHELMUS, JACOBUS MARIA JOSHPH JOSQUIN |
分类号 |
H01L21/768;H01L21/331;H01L21/336;H01L21/8249;H01L23/48;H01L23/532;H01L23/535;H01L27/06;H01L29/417;H01L29/73;H01L29/732;H01L29/78;(IPC1-7):H01L27/08 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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